Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD65R650CEATMA1
Manufacturer Part Number | IPD65R650CEATMA1 |
---|---|
Future Part Number | FT-IPD65R650CEATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPD65R650CEATMA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 0.21mA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
FET Feature | Super Junction |
Power Dissipation (Max) | 86W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD65R650CEATMA1 Weight | Contact Us |
Replacement Part Number | IPD65R650CEATMA1-FT |
IPD400N06NGBTMA1
Infineon Technologies
IPD40N03S4L08ATMA1
Infineon Technologies
IPD49CN10N G
Infineon Technologies
IPD50N03S207ATMA1
Infineon Technologies
IPD50N03S2L06ATMA1
Infineon Technologies
IPD50N03S4L06ATMA1
Infineon Technologies
IPD50N04S308ATMA1
Infineon Technologies
IPD50N04S309ATMA1
Infineon Technologies
IPD50N06S214ATMA1
Infineon Technologies
IPD50N06S214ATMA2
Infineon Technologies
M2GL025-1FG484I
Microsemi Corporation
APA600-BG456M
Microsemi Corporation
APA450-FG256
Microsemi Corporation
A3P400-1FG256
Microsemi Corporation
XC2V4000-4FFG1152I
Xilinx Inc.
LFE2M20E-6FN256I
Lattice Semiconductor Corporation
LCMXO2-1200UHC-4FTG256I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6MG132C
Lattice Semiconductor Corporation
EP3SE110F780C4L
Intel
10CL080YF780C6G
Intel