Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD49CN10N G

| Manufacturer Part Number | IPD49CN10N G |
|---|---|
| Future Part Number | FT-IPD49CN10N G |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | OptiMOS™ |
| IPD49CN10N G Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| IPD49CN10N G Weight | Contact Us |
| Replacement Part Number | IPD49CN10N G-FT |

AUIRLR3410TRL
Infineon Technologies

IPD025N06NATMA1
Infineon Technologies

IPD031N03LGATMA1
Infineon Technologies

IPD031N03LGBTMA1
Infineon Technologies

IPD031N03M G
Infineon Technologies

IPD035N06L3GATMA1
Infineon Technologies

IPD038N04NGBTMA1
Infineon Technologies

IPD03N03LA G
Infineon Technologies

IPD03N03LB G
Infineon Technologies

IPD040N03LGATMA1
Infineon Technologies