Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPN2R304PL,L1Q
Manufacturer Part Number | TPN2R304PL,L1Q |
---|---|
Future Part Number | FT-TPN2R304PL,L1Q |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | U-MOSIX-H |
TPN2R304PL,L1Q Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 0.3mA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 630mW (Ta), 104W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPN2R304PL,L1Q Weight | Contact Us |
Replacement Part Number | TPN2R304PL,L1Q-FT |
SSM3K333R,LF
Toshiba Semiconductor and Storage
SSM3J355R,LF
Toshiba Semiconductor and Storage
SSM3J331R,LF
Toshiba Semiconductor and Storage
SSM3J332R,LF
Toshiba Semiconductor and Storage
SSM3J358R,LF
Toshiba Semiconductor and Storage
SSM3K324R,LF
Toshiba Semiconductor and Storage
SSM3K335R,LF
Toshiba Semiconductor and Storage
SSM3K336R,LF
Toshiba Semiconductor and Storage
SSM3K341R,LF
Toshiba Semiconductor and Storage
SSM3K344R,LF
Toshiba Semiconductor and Storage
XC6SLX150-3FG676I
Xilinx Inc.
XC3S1400A-5FG484C
Xilinx Inc.
AGL600V5-FG484I
Microsemi Corporation
LAXP2-8E-5FTN256E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5SG32C
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
5SGSED8N2F45I2
Intel
5SGXEBBR2H43I3L
Intel
LFEC10E-3F256C
Lattice Semiconductor Corporation
EPF10K10QC208-3N
Intel