Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / TPD3215M
Manufacturer Part Number | TPD3215M |
---|---|
Future Part Number | FT-TPD3215M |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TPD3215M Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
Power - Max | 470W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD3215M Weight | Contact Us |
Replacement Part Number | TPD3215M-FT |
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