Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SISA18ADN-T1-GE3

| Manufacturer Part Number | SISA18ADN-T1-GE3 |
|---|---|
| Future Part Number | FT-SISA18ADN-T1-GE3 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | TrenchFET® |
| SISA18ADN-T1-GE3 Status (Lifecycle) | In Stock |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 38.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| SISA18ADN-T1-GE3 Weight | Contact Us |
| Replacement Part Number | SISA18ADN-T1-GE3-FT |

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