Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1901FETE85LF
Manufacturer Part Number | RN1901FETE85LF |
---|---|
Future Part Number | FT-RN1901FETE85LF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1901FETE85LF Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1901FETE85LF Weight | Contact Us |
Replacement Part Number | RN1901FETE85LF-FT |
PIMD2,115
Nexperia USA Inc.
PIMD2,125
Nexperia USA Inc.
RN1601(TE85L,F)
Toshiba Semiconductor and Storage
RN1604(TE85L,F)
Toshiba Semiconductor and Storage
RN1608(TE85L,F)
Toshiba Semiconductor and Storage
RN1609(TE85L,F)
Toshiba Semiconductor and Storage
RN1610(TE85L,F)
Toshiba Semiconductor and Storage
RN2602(TE85L,F)
Toshiba Semiconductor and Storage
RN2605(TE85L,F)
Toshiba Semiconductor and Storage
RN2606(TE85L,F)
Toshiba Semiconductor and Storage
EP20K300EFC672-1N
Intel
5SGXMB6R2F40I2N
Intel
10AX022E3F27E2LG
Intel
10AX032H3F35I2LG
Intel
5SGXEB5R2F43C3N
Intel
LCMXO2-7000HE-4FG484C
Lattice Semiconductor Corporation
LCMXO2-2000HC-6FTG256I
Lattice Semiconductor Corporation
LFXP2-30E-6FN484C
Lattice Semiconductor Corporation
EP1S30B956C6
Intel
EP20K600CB652C9
Intel