Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTC143ZS,126

| Manufacturer Part Number | PDTC143ZS,126 |
|---|---|
| Future Part Number | FT-PDTC143ZS,126 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| PDTC143ZS,126 Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| PDTC143ZS,126 Weight | Contact Us |
| Replacement Part Number | PDTC143ZS,126-FT |

FJN3302RBU
ON Semiconductor

FJN3303RBU
ON Semiconductor

FJN3304RBU
ON Semiconductor

FJN3305RBU
ON Semiconductor

FJN3306RBU
ON Semiconductor

FJN3307RBU
ON Semiconductor

FJN3308RBU
ON Semiconductor

FJN3309RBU
ON Semiconductor

FJN3310RBU
ON Semiconductor

FJN3311RBU
ON Semiconductor

LCMXO2-7000HE-4TG144I
Lattice Semiconductor Corporation

EPF10K30ATC144-1N
Intel

5CGXFC4C6F27I7N
Intel

EP3SE260F1517C2
Intel

EP2AGX65DF25C6N
Intel

5SGXMB5R3F43C2N
Intel

5SGXMA5K3F35C2LN
Intel

XC6VLX240T-1FFG1156I
Xilinx Inc.

A42MX24-1PLG84
Microsemi Corporation

LCMXO640E-4M100C
Lattice Semiconductor Corporation