Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / NSS60101DMTTBG
Manufacturer Part Number | NSS60101DMTTBG |
---|---|
Future Part Number | FT-NSS60101DMTTBG |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSS60101DMTTBG Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 180mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
Power - Max | 2.27W |
Frequency - Transition | 180MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Supplier Device Package | 6-WDFN (2x2) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSS60101DMTTBG Weight | Contact Us |
Replacement Part Number | NSS60101DMTTBG-FT |
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