Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSM46211DW6T1G
Manufacturer Part Number | NSM46211DW6T1G |
---|---|
Future Part Number | FT-NSM46211DW6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSM46211DW6T1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 65V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 200 @ 2mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSM46211DW6T1G Weight | Contact Us |
Replacement Part Number | NSM46211DW6T1G-FT |
MUN5111DW1T1G
ON Semiconductor
MUN5135DW1T1G
ON Semiconductor
MUN5232DW1T1G
ON Semiconductor
MUN5333DW1T1G
ON Semiconductor
SMUN5314DW1T1G
ON Semiconductor
MUN5233DW1T1G
ON Semiconductor
MUN5311DW1T2G
ON Semiconductor
NSVMUN5332DW1T3G
ON Semiconductor
SMUN5311DW1T3G
ON Semiconductor
MUN5313DW1T1G
ON Semiconductor
AGLN015V2-QNG68I
Microsemi Corporation
AFS1500-2FG484I
Microsemi Corporation
M1AGL1000V2-FGG484I
Microsemi Corporation
EP1S20F484C6
Intel
A1020B-1PL44I
Microsemi Corporation
XC7K410T-1FF900I
Xilinx Inc.
A54SX08A-2FGG144
Microsemi Corporation
AGL250V2-FGG144I
Microsemi Corporation
10AX090N4F45I3SG
Intel
EP1S30F1020C7
Intel