Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MMBTH10LT1G
Manufacturer Part Number | MMBTH10LT1G |
---|---|
Future Part Number | FT-MMBTH10LT1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MMBTH10LT1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Frequency - Transition | 650MHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMBTH10LT1G Weight | Contact Us |
Replacement Part Number | MMBTH10LT1G-FT |
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