Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD50T4G

| Manufacturer Part Number | MJD50T4G |
|---|---|
| Future Part Number | FT-MJD50T4G |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| MJD50T4G Status (Lifecycle) | In Stock |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56W |
| Frequency - Transition | 10MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| MJD50T4G Weight | Contact Us |
| Replacement Part Number | MJD50T4G-FT |

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