Home / Products / Discrete Semiconductor Products / Diodes - RF / MA4AGBLP912
Manufacturer Part Number | MA4AGBLP912 |
---|---|
Future Part Number | FT-MA4AGBLP912 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MA4AGBLP912 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | PIN - Single |
Voltage - Peak Reverse (Max) | 50V |
Current - Max | 40mA |
Capacitance @ Vr, F | 0.03pF @ 5V, 1MHz |
Resistance @ If, F | 4.9 Ohm @ 20mA, 1GHz |
Power Dissipation (Max) | - |
Operating Temperature | -65°C ~ 125°C (TJ) |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MA4AGBLP912 Weight | Contact Us |
Replacement Part Number | MA4AGBLP912-FT |
MMVL3700T1
ON Semiconductor
MMVL3700T1G
ON Semiconductor
MBD330DWT1G
ON Semiconductor
MBD770DWT1G
ON Semiconductor
MBD110DWT1G
ON Semiconductor
MMBD770T1G
ON Semiconductor
MMBD352WT1G
ON Semiconductor
MMBD330T1G
ON Semiconductor
NSVP249SDSF3T1G
ON Semiconductor
MMBD770T1
ON Semiconductor
M2GL025TS-FCSG325
Microsemi Corporation
AGLN030V2-ZCSG81I
Microsemi Corporation
M2GL010-1FG484
Microsemi Corporation
LFE5UM-45F-7BG554I
Lattice Semiconductor Corporation
EP4S40G2F40I3N
Intel
5SGXEB6R3F43I3L
Intel
A40MX02-1PQ100I
Microsemi Corporation
LFE2M100E-6F900I
Lattice Semiconductor Corporation
LFE2-6E-7FN256C
Lattice Semiconductor Corporation
EP3SE50F780C3
Intel