Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N6351
Manufacturer Part Number | JAN2N6351 |
---|---|
Future Part Number | FT-JAN2N6351 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/472 |
JAN2N6351 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AC, TO-33-4 Metal Can |
Supplier Device Package | TO-33 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N6351 Weight | Contact Us |
Replacement Part Number | JAN2N6351-FT |
JANTX2N930
Microsemi Corporation
JANTX2N2906A
Microsemi Corporation
JANS2N2907A
Microsemi Corporation
JAN2N2222AL
Microsemi Corporation
JAN2N2906A
Microsemi Corporation
JAN2N930
Microsemi Corporation
JANTX2N2369A
Microsemi Corporation
JANTX2N4029
Microsemi Corporation
JANTX2N720A
Microsemi Corporation
JANTXV2N2222AL
Microsemi Corporation
EPF10K10ATC144-3N
Intel
XC2S150-6FG456C
Xilinx Inc.
LFE2-12SE-5QN208C
Lattice Semiconductor Corporation
A3P250-2FGG256I
Microsemi Corporation
M7A3P1000-1FGG256
Microsemi Corporation
ICE65L08F-TCB132I
Lattice Semiconductor Corporation
EP4CE15E22I7N
Intel
LFE3-95EA-6LFN672I
Lattice Semiconductor Corporation
EP4CE30F29C6N
Intel
EP20K1000CF33C8N
Intel