Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQP19N10L

| Manufacturer Part Number | FQP19N10L |
|---|---|
| Future Part Number | FT-FQP19N10L |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | QFET® |
| FQP19N10L Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| FQP19N10L Weight | Contact Us |
| Replacement Part Number | FQP19N10L-FT |

FCP125N65S3
ON Semiconductor

FCP165N65S3R0
ON Semiconductor

FCP190N60E
ON Semiconductor

FCP190N65S3R0
ON Semiconductor

FCP260N65S3
ON Semiconductor

FCP360N65S3R0
ON Semiconductor

FCP600N65S3R0
ON Semiconductor

FDP023N08B-F102
ON Semiconductor

FDP045N10A-F102
ON Semiconductor

FCP290N80
ON Semiconductor

XC3S50-4TQG144I
Xilinx Inc.

XC3S5000-4FGG676I
Xilinx Inc.

XC6SLX25-L1FG484I
Xilinx Inc.

A54SX16A-1FG256
Microsemi Corporation

MPF300T-1FCG1152E
Microsemi Corporation

AT6005LV-4AC
Microchip Technology

EP3SL200H780I4L
Intel

LFEC6E-3Q208I
Lattice Semiconductor Corporation

LFXP2-17E-6F484C
Lattice Semiconductor Corporation

10AX066K2F40E2LG
Intel