Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDD6N50FTM

            | Manufacturer Part Number | FDD6N50FTM | 
|---|---|
| Future Part Number | FT-FDD6N50FTM | 
| SPQ / MOQ | Contact Us | 
| Packing Material | Reel/Tray/Tube/Others | 
| Series | UniFET™ | 
| FDD6N50FTM Status (Lifecycle) | In Stock | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 500V | 
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 1.15 Ohm @ 2.75A, 10V | 
| Vgs(th) (Max) @ Id | 5V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 19.8nC @ 10V | 
| Vgs (Max) | ±30V | 
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 25V | 
| FET Feature | - | 
| Power Dissipation (Max) | 89W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | D-Pak | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN | 
| FDD6N50FTM Weight | Contact Us | 
| Replacement Part Number | FDD6N50FTM-FT | 

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