Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTA143XMFHAT2L
Manufacturer Part Number | DTA143XMFHAT2L |
---|---|
Future Part Number | FT-DTA143XMFHAT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
DTA143XMFHAT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | - |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTA143XMFHAT2L Weight | Contact Us |
Replacement Part Number | DTA143XMFHAT2L-FT |
RN2311(TE85L,F)
Toshiba Semiconductor and Storage
RN2313(TE85L,F)
Toshiba Semiconductor and Storage
RN2103ACT(TPL3)
Toshiba Semiconductor and Storage
RN2105ACT(TPL3)
Toshiba Semiconductor and Storage
RN2106ACT(TPL3)
Toshiba Semiconductor and Storage
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
A1425A-PQG100C
Microsemi Corporation
XC3S200-5PQ208C
Xilinx Inc.
APA300-CQ352B
Microsemi Corporation
A54SX08A-PQ208
Microsemi Corporation
A54SX08A-PQ208A
Microsemi Corporation
EP4CGX110DF27C8
Intel
10M04DCF256C7G
Intel
5SGXEA3K2F35I3L
Intel
LFXP3C-3QN208I
Lattice Semiconductor Corporation
LCMXO2280C-4FTN324I
Lattice Semiconductor Corporation