Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / DSS5160FDB-7
Manufacturer Part Number | DSS5160FDB-7 |
---|---|
Future Part Number | FT-DSS5160FDB-7 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DSS5160FDB-7 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 550mV @ 50mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
Power - Max | 405mW |
Frequency - Transition | 65MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | U-DFN2020-6 (Type B) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DSS5160FDB-7 Weight | Contact Us |
Replacement Part Number | DSS5160FDB-7-FT |
ZXTD09N50DE6TC
Diodes Incorporated
ZXTD6717E6TC
Diodes Incorporated
BCV62AE6327HTSA1
Infineon Technologies
BCV62BE6327HTSA1
Infineon Technologies
BCV63B,215
Nexperia USA Inc.
BCV63,215
Nexperia USA Inc.
BCV64B,215
Nexperia USA Inc.
BCV62BE6433HTMA1
Infineon Technologies
BCV62CE6327HTSA1
Infineon Technologies
BCV65,215
Nexperia USA Inc.
A40MX02-VQG80I
Microsemi Corporation
APA1000-FG896M
Microsemi Corporation
A3P1000-FGG484I
Microsemi Corporation
M2GL090T-FGG484
Microsemi Corporation
EP1K30FC256-2
Intel
5SGSED8N2F45I2
Intel
EP3SE80F1152C4LN
Intel
XC4VLX60-12FFG1148C
Xilinx Inc.
A3P600L-FGG144
Microsemi Corporation
LFE3-150EA-7LFN672I
Lattice Semiconductor Corporation