Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / CJD112 TR13
Manufacturer Part Number | CJD112 TR13 |
---|---|
Future Part Number | FT-CJD112 TR13 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
CJD112 TR13 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
CJD112 TR13 Weight | Contact Us |
Replacement Part Number | CJD112 TR13-FT |
2N3702
Central Semiconductor Corp
PN3565
Central Semiconductor Corp
2N3905
Central Semiconductor Corp
2N3417
Central Semiconductor Corp
2N3708
Central Semiconductor Corp
2N3393
Central Semiconductor Corp
2N5551
Central Semiconductor Corp
PN2369A
Central Semiconductor Corp
2N5308
Central Semiconductor Corp
2N2924
Central Semiconductor Corp
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel