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Infineon Technologies BSB012N03LX3 G

Name: BSB012N03LX3 G
Brand: Infineon Technologies
SKU: BSB012N03LX3 G
Availability: InStock
Rating: 4.7 (336 reviews)

MFG Part Number: BSB012N03LX3 G

Available Quantity: 25250 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 30V 180A 2WDSON

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSB012N03LX3 G.pdf

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BSB012N03LX3 G Specifications

Manufacturer Part Number	BSB012N03LX3 G
Future Part Number	FT-BSB012N03LX3 G
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSB012N03LX3 G Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	169nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	16900pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSB012N03LX3 G Weight	Contact Us
Replacement Part Number	BSB012N03LX3 G-FT

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