Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / 2SC5551AE-TD-E
Manufacturer Part Number | 2SC5551AE-TD-E |
---|---|
Future Part Number | FT-2SC5551AE-TD-E |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SC5551AE-TD-E Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Frequency - Transition | 3.5GHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 1.3W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 300mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | PCP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SC5551AE-TD-E Weight | Contact Us |
Replacement Part Number | 2SC5551AE-TD-E-FT |
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